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datasheet pleasereadtheimportantnoticeandwarningsattheendofthisdocument v2.2 www.infineon.com 2018-01-11 IGB50N65H5 highspeedswitchingseriesfifthgeneration highspeedigbtintrenchstop tm 5technology featuresandbenefits: highspeedh5technologyoffering ?best-in-classefficiencyinhardswitchingandresonant topologies ?650vbreakdownvoltage ?lowq g ?maximumjunctiontemperature175c ?pb-freeleadplating;rohscompliant ?completeproductspectrumandpspicemodels: http://www.infineon.com/igbt/ potentialapplications: ?energygeneration -solarstringinverter -solarmicroinverter ?industrialpowersupplies -industrialsmps -industrialups ?metaltreatment -welding ?energydistribution -energystorage ?infrastructureCcharge -charger productvalidation: qualifiedforindustrialapplicationsaccordingtotherelevanttests ofjedec47/20/22 keyperformanceandpackageparameters type v ce i c v cesat , t vj =25c t vjmax marking package IGB50N65H5 650v 50a 1.65v 175c g50eh5 pg-to263-3 g c e g e c
datasheet 2 v2.2 2018-01-11 IGB50N65H5 highspeedswitchingseriesfifthgeneration tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 g c e g e c
datasheet 3 v2.2 2018-01-11 IGB50N65H5 highspeedswitchingseriesfifthgeneration maximumratings foroptimumlifetimeandreliability,infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. parameter symbol value unit collector-emittervoltage, t vj 3 25c v ce 650 v dccollectorcurrent,limitedby t vjmax t c =25cvaluelimitedbybondwire t c =100c i c 80.0 53.7 a pulsedcollectorcurrent, t p limitedby t vjmax i cpuls 150.0 a turn off safe operating area v ce 650v, t vj 175c, t p =1s - 150.0 a gate-emitter voltage transientgate-emittervoltage( t p 10s, d <0.010) v ge 20 30 v powerdissipation t c =25c powerdissipation t c =100c p tot 270.0 135.0 w operating junction temperature t vj -40...+175 c storage temperature t stg -55...+150 c soldering temperature, reflow soldering (msl1 according to jedec j-sta-020) 260 c thermalresistance value min. typ. max. parameter symbol conditions unit r th characteristics igbt thermal resistance, junction - case r th(j-c) - - 0.55 k/w thermal resistance, min. footprint junction - ambient r th(j-a) - - 65 k/w thermal resistance, 6cm2 cu on pcb junction - ambient r th(j-a) - - 40 k/w electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit staticcharacteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =0.20ma 650 - - v collector-emitter saturation voltage v cesat v ge =15.0v, i c =50.0a t vj =25c t vj =125c t vj =175c - - - 1.65 1.85 1.95 2.10 - - v gate-emitter threshold voltage v ge(th) i c =0.50ma, v ce = v ge 3.2 4.0 4.8 v zero gate voltage collector current i ces v ce =650v, v ge =0v t vj =25c t vj =175c - - - 2000 50 - a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =50.0a - 62.0 - s g c e g e c
datasheet 4 v2.2 2018-01-11 IGB50N65H5 highspeedswitchingseriesfifthgeneration electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit dynamiccharacteristic input capacitance c ies - 3000 - output capacitance c oes - 50 - reverse transfer capacitance c res - 11 - v ce =25v, v ge =0v,f=1mhz pf gate charge q g v cc =520v, i c =50.0a, v ge =15v - 120.0 - nc internal emitter inductance measured 5mm (0.197 in.) from case l e - 7.0 - nh switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =25c turn-on delay time t d(on) - 23 - ns rise time t r - 31 - ns turn-off delay time t d(off) - 173 - ns fall time t f - 40 - ns turn-on energy e on - 1.59 - mj turn-off energy e off - 0.75 - mj total switching energy e ts - 2.34 - mj t vj =25c, v cc =400v, i c =50.0a, v ge =0.0/15.0v, r g(on) =12.0 w , r g(off) =12.0 w , l s =30nh, c s =30pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. turn-on delay time t d(on) - 21 - ns rise time t r - 15 - ns turn-off delay time t d(off) - 180 - ns fall time t f - 18 - ns turn-on energy e on - 0.52 - mj turn-off energy e off - 0.18 - mj total switching energy e ts - 0.70 - mj t vj =25c, v cc =400v, i c =25.0a, v ge =0.0/15.0v, r g(on) =12.0 w , r g(off) =12.0 w , l s =30nh, c s =30pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. g c e g e c
datasheet 5 v2.2 2018-01-11 IGB50N65H5 highspeedswitchingseriesfifthgeneration switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =150c turn-on delay time t d(on) - 23 - ns rise time t r - 29 - ns turn-off delay time t d(off) - 190 - ns fall time t f - 33 - ns turn-on energy e on - 1.95 - mj turn-off energy e off - 0.73 - mj total switching energy e ts - 2.68 - mj t vj =150c, v cc =400v, i c =50.0a, v ge =0.0/15.0v, r g(on) =12.0 w , r g(off) =12.0 w , l s =30nh, c s =30pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. turn-on delay time t d(on) - 20 - ns rise time t r - 15 - ns turn-off delay time t d(off) - 205 - ns fall time t f - 26 - ns turn-on energy e on - 0.75 - mj turn-off energy e off - 0.27 - mj total switching energy e ts - 1.02 - mj t vj =150c, v cc =400v, i c =25.0a, v ge =0.0/15.0v, r g(on) =12.0 w , r g(off) =12.0 w , l s =30nh, c s =30pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. g c e g e c
datasheet 6 v2.2 2018-01-11 IGB50N65H5 highspeedswitchingseriesfifthgeneration figure 1. powerdissipationasafunctionofcase temperature ( t vj 175c) t c ,casetemperature[c] p tot ,powerdissipation[w] 25 50 75 100 125 150 175 0 30 60 90 120 150 180 210 240 270 figure 2. collectorcurrentasafunctionofcase temperature ( v ge 3 15v, t vj 175c) t c ,casetemperature[c] i c ,collectorcurrent[a] 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90 figure 3. typicaloutputcharacteristic ( t vj =25c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 5 0 15 30 45 60 75 90 105 120 135 150 v ge =20v 18v 15v 12v 10v 8v 7v 6v 5v figure 4. typicaloutputcharacteristic ( t vj =150c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 5 0 15 30 45 60 75 90 105 120 135 150 v ge =20v 18v 15v 12v 10v 8v 7v 6v 5v g c e g e c
datasheet 7 v2.2 2018-01-11 IGB50N65H5 highspeedswitchingseriesfifthgeneration figure 5. typicaltransfercharacteristic ( v ce =20v) v ge ,gate-emittervoltage[v] i c ,collectorcurrent[a] 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 15 30 45 60 75 90 105 120 135 150 t j =25c t j =150c figure 6. typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature ( v ge =15v) t vj ,junctiontemperature[c] v cesat ,collector-emittersaturation[v] 25 50 75 100 125 150 175 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 i c =12,5a i c =25a i c =50a figure 7. typicalswitchingtimesasafunctionof collectorcurrent (inductiveload, t vj =150c, v ce =400v, v ge =0/15v, r g =12 w ,dynamictestcircuitin figure e) i c ,collectorcurrent[a] t ,switchingtimes[ns] 0 30 60 90 120 150 1 10 100 1000 t d(off) t f t d(on) t r figure 8. typicalswitchingtimesasafunctionofgate resistor (inductiveload, t vj =150c, v ce =400v, v ge =0/15v, i c =50a,dynamictestcircuitin figure e) r g ,gateresistor[ w ] t ,switchingtimes[ns] 0 5 10 15 20 25 30 35 40 1 10 100 1000 t d(off) t f t d(on) t r g c e g e c
datasheet 8 v2.2 2018-01-11 IGB50N65H5 highspeedswitchingseriesfifthgeneration figure 9. typicalswitchingtimesasafunctionof junctiontemperature (inductiveload, v ce =400v, v ge =0/15v, i c =50a, r g =12 w ,dynamictestcircuitin figure e) t vj ,junctiontemperature[c] t ,switchingtimes[ns] 25 50 75 100 125 150 175 1 10 100 1000 t d(off) t f t d(on) t r figure 10. gate-emitterthresholdvoltageasafunction ofjunctiontemperature ( i c =0.5ma) t vj ,junctiontemperature[c] v ge(th) ,gate-emitterthresholdvoltage[v] 0 25 50 75 100 125 150 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 typ. figure 11. typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload, t vj =150c, v ce =400v, v ge =0/15v, r g =12 w ,dynamictestcircuitin figure e) i c ,collectorcurrent[a] e ,switchingenergylosses[mj] 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 9 10 11 12 e off e on e ts figure 12. typicalswitchingenergylossesasa functionofgateresistor (inductiveload, t vj =150c, v ce =400v, v ge =0/15v, i c =50a,dynamictestcircuitin figure e) r g ,gateresistor[ w ] e ,switchingenergylosses[mj] 0 5 10 15 20 25 30 35 40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 e off e on e ts g c e g e c
datasheet 9 v2.2 2018-01-11 IGB50N65H5 highspeedswitchingseriesfifthgeneration figure 13. typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload, v ce =400v, v ge =0/15v, i c =50a, r g =12 w ,dynamictestcircuitin figure e) t vj ,junctiontemperature[c] e ,switchingenergylosses[mj] 25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 e off e on e ts figure 14. typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload, t vj =150c, v ge =0/15v, i c =50a, r g =12 w ,dynamictestcircuitin figure e) v ce ,collector-emittervoltage[v] e ,switchingenergylosses[mj] 200 250 300 350 400 450 500 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 e off e on e ts figure 15. typicalgatecharge ( i c =50a) q ge ,gatecharge[nc] v ge ,gate-emittervoltage[v] 0 20 40 60 80 100 120 0 2 4 6 8 10 12 14 16 130v 520v figure 16. typicalcapacitanceasafunctionof collector-emittervoltage ( v ge =0v,f=1mhz) v ce ,collector-emittervoltage[v] c ,capacitance[pf] 0 5 10 15 20 25 30 1 10 100 1000 1e+4 c ies c oes c res g c e g e c
datasheet 10 v2.2 2018-01-11 IGB50N65H5 highspeedswitchingseriesfifthgeneration figure 17. igbttransientthermalimpedance ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalimpedance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.001 0.01 0.1 1 d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.1587018 3.4e-4 2 0.2383852 2.8e-3 3 0.1347618 0.0136827 4 0.01158283 0.2164563 5 1.8e-3 3.533918 g c e g e c
datasheet 11 v2.2 2018-01-11 IGB50N65H5 highspeedswitchingseriesfifthgeneration g c e g e c 01 30-08-2007 z8b00003324 0.039 0.000 0.026 0.335 0.013 0.037 min 0.169 0.046 0.280 0.090 0.386 8.60 0.339 0.256 0.575 0.632 0.366 0.177 0.421 0.049 0.144 5.08 2.54 1.00 7.10 2.29 9.80 6.50 9.30 4.50 14.61 16.05 10.70 1.25 3.65 0.70 2 0.00 0.65 0.33 8.51 0.95 4.30 min 1.17 1.60 1.78 7.90 10.31 3.00 15.88 16.25 9.50 4.70 10.90 1.45 3.85 max 4.57 0.25 1.15 0.65 9.45 0.85 1.40 0.200 0.100 0.028 2 0.063 0.070 0.311 0.406 0.118 0.625 0.640 0.374 0.185 0.429 0.057 0.152 0.010 0.180 0.033 0.026 0.372 0.045 max 0.055 0 7.5mm 5 5 0 package drawing pg-to263-3
datasheet 12 v2.2 2018-01-11 IGB50N65H5 highspeedswitchingseriesfifthgeneration g c e g e c 01 30-08-2007 z8b00003324 0.039 0.000 0.026 0.335 0.013 0.037 min 0.169 0.046 0.280 0.090 0.386 8.60 0.339 0.256 0.575 0.632 0.366 0.177 0.421 0.049 0.144 5.08 2.54 1.00 7.10 2.29 9.80 6.50 9.30 4.50 14.61 16.05 10.70 1.25 3.65 0.70 2 0.00 0.65 0.33 8.51 0.95 4.30 min 1.17 1.60 1.78 7.90 10.31 3.00 15.88 16.25 9.50 4.70 10.90 1.45 3.85 max 4.57 0.25 1.15 0.65 9.45 0.85 1.40 0.200 0.100 0.028 2 0.063 0.070 0.311 0.406 0.118 0.625 0.640 0.374 0.185 0.429 0.057 0.152 0.010 0.180 0.033 0.026 0.372 0.045 max 0.055 0 7.5mm 5 5 0 package drawing pg-to263-3 t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce testing conditions
datasheet 13 v2.2 2018-01-11 IGB50N65H5 highspeedswitchingseriesfifthgeneration revisionhistory IGB50N65H5 revision:2018-01-11,rev.2.2 previous revision revision date subjects (major changes since last revision) 2.1 2017-05-19 final data sheet 2.2 2018-01-11 remove of pb-free symbol and editorial changes. g c e g e c 01 30-08-2007 z8b00003324 0.039 0.000 0.026 0.335 0.013 0.037 min 0.169 0.046 0.280 0.090 0.386 8.60 0.339 0.256 0.575 0.632 0.366 0.177 0.421 0.049 0.144 5.08 2.54 1.00 7.10 2.29 9.80 6.50 9.30 4.50 14.61 16.05 10.70 1.25 3.65 0.70 2 0.00 0.65 0.33 8.51 0.95 4.30 min 1.17 1.60 1.78 7.90 10.31 3.00 15.88 16.25 9.50 4.70 10.90 1.45 3.85 max 4.57 0.25 1.15 0.65 9.45 0.85 1.40 0.200 0.100 0.028 2 0.063 0.070 0.311 0.406 0.118 0.625 0.640 0.374 0.185 0.429 0.057 0.152 0.010 0.180 0.033 0.026 0.372 0.045 max 0.055 0 7.5mm 5 5 0 package drawing pg-to263-3 t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce testing conditions
trademarks allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. publishedby infineontechnologiesag 81726mnchen,germany ?infineontechnologiesag2018. allrightsreserved. importantnotice theinformationgiveninthisdocumentshallin noevent beregardedasaguaranteeofconditionsorcharacteristics (beschaffenheitsgarantie).withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany informationregardingtheapplicationoftheproduct,infineontechnologiesherebydisclaimsanyandallwarrantiesand liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird party. inaddition,anyinformationgiveninthisdocumentissubjecttocustomerscompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomersproductsandanyuseof theproductofinfineontechnologiesincustomersapplications. thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.itistheresponsibilityof customerstechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication. forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest infineontechnologiesoffice(www.infineon.com). pleasenotethatthisproductis not qualifiedaccordingtotheaecq100oraecq101documentsoftheautomotive electronicscouncil. warnings duetotechnicalrequirementsproductsmaycontaindangeroussubstances.forinformationonthetypesinquestion pleasecontactyournearestinfineontechnologiesoffice. exceptasotherwiseexplicitlyapprovedbyinfineontechnologiesinawrittendocumentsignedbyauthorized representativesofinfineontechnologies,infineontechnologiesproductsmay not beusedinanyapplicationswherea failureoftheproductoranyconsequencesoftheusethereofcanreasonablybeexpectedtoresultinpersonalinjury. g c e g e c 01 30-08-2007 z8b00003324 0.039 0.000 0.026 0.335 0.013 0.037 min 0.169 0.046 0.280 0.090 0.386 8.60 0.339 0.256 0.575 0.632 0.366 0.177 0.421 0.049 0.144 5.08 2.54 1.00 7.10 2.29 9.80 6.50 9.30 4.50 14.61 16.05 10.70 1.25 3.65 0.70 2 0.00 0.65 0.33 8.51 0.95 4.30 min 1.17 1.60 1.78 7.90 10.31 3.00 15.88 16.25 9.50 4.70 10.90 1.45 3.85 max 4.57 0.25 1.15 0.65 9.45 0.85 1.40 0.200 0.100 0.028 2 0.063 0.070 0.311 0.406 0.118 0.625 0.640 0.374 0.185 0.429 0.057 0.152 0.010 0.180 0.033 0.026 0.372 0.045 max 0.055 0 7.5mm 5 5 0 package drawing pg-to263-3 t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce testing conditions

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